| 摘要 |
The present invention provides a resist material including a polymer compound which is a base resin having increasing alkaline solubility by an acid, and a polymer compound represented by General Formula 1 as a polymer additive. (R^1 is a single bond or an alkylene group, R^2 is a fluorine atom or an alkyl group including a fluorine atom, a phenyl group, or an alkyl substituted phenyl group. X^1, and X^2 are a phenylene group or a naphthalene group. m is 1 or 2. M is CH_2, O, or S. 0<p<1.0, 0<=(q-1)<1.0, 0<=(q-2)<1.0, 0<=(q-3)<1.0, and 0<(q-1)+(q-2)+(q-3)<1.0.) A photoresist layer formed by using the resist material of the present invention may decrease the generation of out gas from a resist layer during EUV exposure, and the surface of the resist layer may become hydrophilic. Thus, the generation of blob defects on the resist layer after development may be prevented. |
