| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a power module semiconductor device capable of relaxing thermal stress by thermal shock and improving a manufacturing yield.SOLUTION: A power module semiconductor device comprises: a metal substrate 21; a first bonding layer 21b disposed on a surface of the metal substrate 21; a semiconductor device Q1 disposed on the metal substrate 21 via the first bonding layer 21b; and a fillet layer 21f disposed in side wall parts of the semiconductor device Q1 and the first bonding layer 21b and formed of the same material as the first bonding layer 21b. The contact surface height hof the fillet layer 21f which comes into contact with the side wall parts of the semiconductor device Q1 and the first bonding layer 21b is not less than half of the thickness of the semiconductor device Q1.</p> |
