| 摘要 |
An SRAM array is formed by FinFETs formed by a fin line. Each fin line is formed in a substrate. The bottom part of the fin line is surrounded by an isolation region. The upper part of the fin line protrudes from the top surface of the isolation region. In the drawing of the first cross-section of the SRAM array, each fin line is a rectangle. In the drawing of the second cross-section of the SRAM array, the terminal of each fin line is a taper shape. |
