NON-VOLATILE MEMORY DEVICE

摘要

The present invention relates to a non-volatile memory device which comprises a tunnel insulating film formed on a semiconductor substrate; a floating gate consisted of a plurality of material films stacked on the tunnel insulating film in which energy bands of the upper part and the lower part become symmetrical on the basis of the material film located at the center; a dielectric film formed on the floating gate; and a control gate formed on the dielectric film.