发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>A semiconductor device capable of securing excellent tolerance to moisture and high mechanical strength and a method for manufacturing the same are obtained. A field effect transistor (2) is formed on the main surface of a substrate (1). Next, a low melting point glass layer (5) which has a melting point of 450°C or less is coated on the main surface of the substrate (1) and the field effect transistor (2). Then the substrate (1) is heat-treated while an insulating or semi-insulating pressurization fixture (6) pressurizes the low melting point glass layer (5) toward the main surface of the substrate (1), to sinter the melting point glass layer (5). After the low melting point glass layer (5) is sintered, the pressurization fixture (6) is left as it is.</p> |
申请公布号 |
KR20140080419(A) |
申请公布日期 |
2014.06.30 |
申请号 |
KR20130155139 |
申请日期 |
2013.12.13 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
NOGAMI YOICHI;YAMAMOTO YOSHITSUGU;YOKOYAMA YOSHINORI;SODA SHINNOSUKE |
分类号 |
H01L21/316;H01L21/336;H01L29/786 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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