| 摘要 |
The present invention relates to an apparatus for growing a sapphire single crystal in molten alumina, including: a chamber for conducting a process for growing a sapphire single crystal; a crucible mounted inside the chamber and filled with an alumina raw material; an insulation material installed inside the chamber for accommodating the crucible; a high-frequency coil installed outside the insulation material, for melting the alumina by induction heating of the crucible; and a temperature measurement unit installed on the chamber, to measure the surface temperature during a seeding process in which a single crystal seed comes in contact with the melt. |
