发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that allows reducing the product of on-resistance and input capacitance.SOLUTION: A semiconductor device includes a first semiconductor layer 2, a second semiconductor layer 8, a third semiconductor layer 9, a pair of first conductors 7a, a pair of second conductors 7b, a first wiring layer 12, and a second wiring layer 13. The pair of first conductors and the pair of second conductors are provided in first and second trenches 3a and 3b via first and second insulating films 6a and 6b, respectively, and are faced to the first semiconductor layer and the second semiconductor layer. The first wiring layer has a main body portion 12b and a plurality of salients 12a. The plurality of salients extend from the main body portion and are electrically connected to the first conductors via a first opening 31 of a first interlayer insulating film 20. The second wiring layer is electrically connected to the second conductors via a second opening 32 of the first interlayer insulating film.
申请公布号 JP2014120656(A) 申请公布日期 2014.06.30
申请号 JP20120275699 申请日期 2012.12.18
申请人 TOSHIBA CORP 发明人 ICHINOSEKI KENTARO
分类号 H01L29/78;H01L29/739 主分类号 H01L29/78
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