| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which may be applied to a high breakdown voltage semiconductor element and enables downsizing, and to provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor package 8 includes: a conductor plate 1; a semiconductor element 4 disposed on the conductor plate 1; a terminal where one end is electrically connected with the semiconductor element 4; and a first resin 7 which seals the conductor plate 1, the semiconductor element 4, and the one end of the terminal. A second resin 9 covers the semiconductor package 8. A lower surface of the conductor plate 1 is exposed from the first and second resins 7, 9. The other end of the terminal protrudes from an upper surface of the second resin 9. A fusion temperature of the second resin 9 is lower than a fusion temperature of the first resin 7. |
