发明名称 UPPER ELECTRODE OF DRY ETCHING REACTION CHAMBER AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide an upper electrode of a dry etching reaction chamber which allows for prolongation of use-life by enhancing the etching resistance thereof, and to provide a manufacturing method therefor.SOLUTION: An upper electrode of a dry etching reaction chamber including a plate and at least one gas inlet unit, and a manufacturing method therefor are provided. The plate includes at least one through hole. The gas inlet unit is fitted in the through hole, and includes a plurality of gas holes. When the gas hole is made in the gas inlet unit of the upper electrode of a dry etching reaction chamber, destruction of the plate is reduced and the use-life of the upper electrode is prolonged. A manufacturing method therefor is also provided.
申请公布号 JP2014120764(A) 申请公布日期 2014.06.30
申请号 JP20130236994 申请日期 2013.11.15
申请人 GLOVAL MATERIAL SCIENCE CO LTD 发明人 KIM DONG-HEE;LIU FANG YU;CHEN CHING FENG
分类号 H01L21/3065;C23C4/10;C23F4/00;H05H1/46 主分类号 H01L21/3065
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