发明名称 |
UPPER ELECTRODE OF DRY ETCHING REACTION CHAMBER AND MANUFACTURING METHOD THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To provide an upper electrode of a dry etching reaction chamber which allows for prolongation of use-life by enhancing the etching resistance thereof, and to provide a manufacturing method therefor.SOLUTION: An upper electrode of a dry etching reaction chamber including a plate and at least one gas inlet unit, and a manufacturing method therefor are provided. The plate includes at least one through hole. The gas inlet unit is fitted in the through hole, and includes a plurality of gas holes. When the gas hole is made in the gas inlet unit of the upper electrode of a dry etching reaction chamber, destruction of the plate is reduced and the use-life of the upper electrode is prolonged. A manufacturing method therefor is also provided. |
申请公布号 |
JP2014120764(A) |
申请公布日期 |
2014.06.30 |
申请号 |
JP20130236994 |
申请日期 |
2013.11.15 |
申请人 |
GLOVAL MATERIAL SCIENCE CO LTD |
发明人 |
KIM DONG-HEE;LIU FANG YU;CHEN CHING FENG |
分类号 |
H01L21/3065;C23C4/10;C23F4/00;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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