| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device with a reduced forward voltage and a reduced reverse current.SOLUTION: A semiconductor device includes a first-conductivity-type semiconductor substrate 1, a first first-conductivity-type semiconductor layer 2, a second first-conductivity-type semiconductor layer 3, second-conductivity-type bottom layers 5 that are adjacent to each other, a Schottky metal 6, and a cathode electrode 7. The second semiconductor layer is provided on the first first-conductivity-type semiconductor layer and has a higher first-conductivity-type impurity concentration than the first first-conductivity-type semiconductor layer. The adjacent second-conductivity-type bottom layers are provided on the bottoms of a plurality of trenches extending from an upper surface of the second first-conductivity-type semiconductor layer toward an epitaxial layer. The Schottky metal is provided on the second first-conductivity-type semiconductor layer and in the plurality of trenches. The Schottky metal forms a Schottky barrier at a junction portion between the Schottky metal and the second first-conductivity-type semiconductor layer. The cathode electrode is provided on the semiconductor substrate and is ohmic-connected to the semiconductor substrate.</p> |
