RESISTIVE RANDOM ACCESS MEMORY(RRAM) STRUCTURE AND METHOD OF MAKING THE RRAM STRUCTURE

摘要

The present disclosure provides a resistive random access memory (RRAM) cell. The RRAM cell includes a transistor; a bottom electrode adjacent to a drain region of the transistor and coplanar with a gate; a resistive material layer on the bottom electrode; a top electrode on the resistive material layer; and a conductive material connecting the bottom electrode to the drain region.