| 摘要 |
The prevent invention relates to a substrate processing apparatus. The substrate processing apparatus according to one embodiment of the present invention includes a process chamber forming an inner space for processing a substrate; a substrate support member supporting the substrate and arranged in the process chamber; a showerhead having a plasma supply hole connected to a lower space and an upper space, and facing the substrate support member to be divided into the lower space and the upper space; an excitation supply unit supplying an excitation gas to the upper space; a process supply unit supplying a process gas to the lower space; and a microwave application unit applying a microwave to the upper space. The process gas supply unit includes a first process gas supply part supplying the process gas from the showerhead to the lower space; and a second process gas supply part supplying the process gas from the inner wall of the process chamber to the lower space. |
