IMPLANTED-ION ASSISTED GROWTH METHOD OF METAL OXIDE NANOWIRE AND PATTENING DEVICE USING THE METHOD
摘要
<p>According to one aspect of the present invention, provided is a method for growing metal oxide nanowire by injecting ions. The method includes a thin film deposition step of depositing a metal oxide thin film on a substrate, an ion injection step of injecting ions into the metal oxide thin film, and a heating step of growing the metal oxide thin film by heating the metal oxide thin film containing the ions.</p>
申请公布号
KR101411332(B1)
申请公布日期
2014.06.27
申请号
KR20130157282
申请日期
2013.12.17
申请人
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
发明人
KIM, JONG BAEG;NA, HYUNG JOO;BAEK, DAE HYUN;LEE, KYUNG HOON;CHOI, JUNG WOOK;SIM, JAE SAM