发明名称 IMPLANTED-ION ASSISTED GROWTH METHOD OF METAL OXIDE NANOWIRE AND PATTENING DEVICE USING THE METHOD
摘要 <p>According to one aspect of the present invention, provided is a method for growing metal oxide nanowire by injecting ions. The method includes a thin film deposition step of depositing a metal oxide thin film on a substrate, an ion injection step of injecting ions into the metal oxide thin film, and a heating step of growing the metal oxide thin film by heating the metal oxide thin film containing the ions.</p>
申请公布号 KR101411332(B1) 申请公布日期 2014.06.27
申请号 KR20130157282 申请日期 2013.12.17
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 KIM, JONG BAEG;NA, HYUNG JOO;BAEK, DAE HYUN;LEE, KYUNG HOON;CHOI, JUNG WOOK;SIM, JAE SAM
分类号 B82B3/00;B82B1/00 主分类号 B82B3/00
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