| 摘要 |
According to a method of preparing a three component system material obtained by sintering Se compounds (Cu_2Se, In_2Se_3, Ga_2Se_3), powders of two component system materials are mixed with each other at a stoichiometric composition ratio, and the mixed powders are inserted into a sintering mold, and the sintering mold is mounted in a sintering chamber, which obtains the three component system Se compounds (Cu_xInSe_2+α, Cu_xGaSe_2+α) through the sintering process on the assumption that the purity of the powders is 99.999%, the particle size is in the range of 1μm to 100μm, x is in the range of 0.8 to 1.0,αis in the range of 0 to 0.2, the maximum mold input is 60 Mpa, the sintering temperature is in the range of 500-800°C, and the chamber pressure is less than 10^-3. |
