| 摘要 |
Provided is an adhesive tape for processing semiconductor wafers capable of preventing the wafer from being bent, reducing dimples on the wafer rear surface, and reducing adhesive residues or surface contamination on wafer surface electrodes when the semiconductor wafers are processed and capable of grinding wafer thin films. The adhesive tape for processing the semiconductor wafers has at least one or more low elasticity layers on one side of a high elasticity base film and has a radiation curing adhesive layer on the low elasticity layer. The Young's modulus of the high elasticity base film is 5.0×108 Pa to 1.1×1010 Pa. The elastic modulus (G' (25°C)) at 25°C of the low elasticity layer is 2.5×105 Pa to 4.0×105 Pa. The elastic modulus (G' (60°C)) at 60°C is 0.2×105 Pa to 1.5×105 Pa. The ratio (G'(60°C)/G'(25°C)) is 0.5 or less. The loss tangent (tanδ(25°C)) at 25°C of the low elasticity layer is 0.08-0.15. The ratio (tanδ(60°C )/ tanδ(25°C)) with the loss tangent (tanδ(60°C)) at 60°C is 4.0 or greater. Furthermore, the thickness of the radiation curing adhesive layer is 5 to 100μm. The thickness of radiation curing adhesive layer or low elasticity layer is 0.5 or less. [Reference numerals] (1) Base film(high elasticity); (2) Layer of a low elasticity rate; (3) Adhesive layer; (4) Wafer pattern layer(etc. wire, electrode); (5) Wafer Si layer |
