发明名称 METHOD OF EVALUATING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND METHOD OF PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY INCLUDING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a simple method of evaluating the performance of a copolymer for lithography in pattern formation without carrying out pattern formation.SOLUTION: A method of evaluating a copolymer for lithography includes (1) a step of forming a thin film on a substrate by using a composition containing a copolymer for lithography and a compound generating an acid when irradiated with active rays or radiation rays and irradiating the resultant body with active rays or radiation rays, (2) a step of carrying out an acid elimination reaction by the irradiation step of the step (1), (3) a step of determining an amount of the eliminated compound produced in the irradiation step, (4) a step of calculating the development speed in irradiation of irradiation energy in the step (1), (5) a step of calculating a relationship between the developing speed calculated in the step (4) and the amount of the eliminated compound in the step (3) and (6) a step of evaluating lithography characteristics of the composition containing the copolymer for lithography on the basis of the relationship calculated in the step (5).
申请公布号 JP2014115640(A) 申请公布日期 2014.06.26
申请号 JP20130234571 申请日期 2013.11.13
申请人 MITSUBISHI RAYON CO LTD 发明人 KATO KEISUKE;TAKAMI MUTSUKO
分类号 G03F7/26;G03F7/039;H01L21/027 主分类号 G03F7/26
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