| 发明名称 |
FABRICATION METHOD OF SEMICONDUCTOR APPARATUS |
| 摘要 |
A method of fabricating a semiconductor apparatus includes forming an insulating layer on a semiconductor substrate, forming a source post in the insulating layer, and forming a semiconductor layer over the source post and the insulating layer. |
| 申请公布号 |
US2014179069(A1) |
申请公布日期 |
2014.06.26 |
| 申请号 |
US201313845770 |
申请日期 |
2013.03.18 |
| 申请人 |
SK HYNIX INC. |
发明人 |
LEE Young Ho;BAEK Seung Beom |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor apparatus, the method comprising:
forming an insulating layer on a semiconductor substrate; forming a source post in the insulating layer; and forming a semiconductor layer directly over the source post and the insulating layer. |
| 地址 |
Gyeonggi-do KR |
