SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME

摘要

A schottky barrier diode according to an embodiment of the present invention includes: an n-type epilayer which is arranged on a first surface of an n+ type silicon carbide substrate; multiple p+ regions which include a first p+ region arranged on the n-type epilayer and a second p+ region arranged on the first p+ region; an n+ type epilayer which is arranged on the n- type epilayer and the first p+ region, and is arranged between the second p+ regions; a schottky electrode which is arranged on the n+ type epilayer and the second p+ region; and an ohmic electrode which is arranged on a second surface of the n+ silicon carbide substrate. The width of the second p+ region is narrower than the width of the first p+ region.