| 摘要 |
PROBLEM TO BE SOLVED: To encapsulate a liquid crystal material with high sealability.SOLUTION: A thin film transistor 26 includes: a gate electrode 28 formed of metal; a gate insulating film 30 covering the gate electrode 28 and having light permeability; a semiconductor film 32 overlapping the gate electrode 28 via the gate insulating film 30; and a source electrode 34 and a drain electrode 36 formed of metal with an interval on the side of the semiconductor film 32 opposite to the gate insulating film 30. The gate electrode 28 and the semiconductor film 32 have through holes 28a, 32a communicating to one another so as to have the gate insulating film 30 inside the gate electrode and the semiconductor film. The gate insulating film 30 has a region inside the through holes 28a, 32a of the gate electrode 28 and the semiconductor film 32. The source electrode 34 and the drain electrode 36 overlap with a part of the region inside the through holes 28a, 32a of the gate insulating film 30, and pass through the inside of the through holes 28a, 32a of the gate electrode 28 and the semiconductor film 32 so as to avoid the remaining part of the region. |
