HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor device, which allows production of the semiconductor device to be suitable for a sub-millimeter wave operation.SOLUTION: In a method for forming a semiconductor device, a photoresist layer is deposited on a semiconductor substrate 100, a window 106 is formed in the photoresist layer by electron beam lithography, a conformal layer is deposited on the photoresist layer and in the window 106, and substantially all of the conformal layer is selectively removed from the photoresist layer 102 and a bottom portion of the window to form dielectric sidewalls in the window 106.