发明名称 |
METHOD FOR FORMING A DUAL DAMASCENE STRUCTURE OF A SEMICONDUCTOR DEVICE, AND A SEMICONDUCTOR DEVICE THEREWITH |
摘要 |
Forming a dual damascene structure includes forming a first insulation layer and a second insulation layer, forming a resist mask, forming a via hole down to a lower end of the first insulation layer, forming a hardmask layer in the via hole and on the second insulation layer using a spin-coating method, forming a resist mask, forming a first trench hole down to a lower end of the second insulation layer, respectively removing a part of the hardmask layer in the via hole and a part of the hardmask layer on the second insulation layer, forming a second trench hole by removing a part of the first insulation layer between a top corner of the hardmask layer remaining in the via hole and a bottom corner of the first trench hole, removing the hardmask layer, and filling the via hole and the second trench hole with a conductive material. |
申请公布号 |
US2014175669(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201314072881 |
申请日期 |
2013.11.06 |
申请人 |
MOON Joon-Young;CHO Youn-Jin;LEE Sung-Jae;PARK You-Jung;YOON Yong-Woon;LEE Chul-Ho;LEE Chung-Heon |
发明人 |
MOON Joon-Young;CHO Youn-Jin;LEE Sung-Jae;PARK You-Jung;YOON Yong-Woon;LEE Chul-Ho;LEE Chung-Heon |
分类号 |
H01L21/768;H01L23/535 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a dual damascene structure of a semiconductor device, the method comprising:
sequentially forming a first insulation layer and a second insulation layer on a substrate; forming a resist mask having a pattern for forming a via hole on the second insulation layer; forming a via hole down to a lower end of the first insulation layer; forming a hardmask layer in the via hole and on the second insulation layer using a spin-coating method; forming a resist mask having a pattern for forming a trench hole on the hardmask layer; forming a first trench hole through the resist mask having the pattern for forming the trench hole, the first trench hole being formed down to a lower end of the second insulation layer; respectively removing a part of the hardmask layer in the via hole and a part of the hardmask layer on the second insulation layer; forming a second trench hole by removing a part of the first insulation layer between a top corner of the hardmask layer remaining in the via hole and a bottom corner of the first trench hole; removing the hardmask layer remaining in the via hole and on the second insulation layer; and forming an upper wire by filling the via hole and the second trench hole with a conductive material. |
地址 |
Uiwang-si KR |