SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

Embodiments relate to a method for manufacturing a semiconductor device including at least one of: (1) Forming a lower electrode pattern on a substrate. (2) Forming an etch stop film on/over the lower electrode pattern. (3) Forming a first interlayer insulating layer on/over the etch stop film. (4) Forming an upper electrode pattern on/over the first interlayer insulating layer. (5) Forming a second interlayer insulating layer on/over the upper electrode pattern. (6) Forming an etch blocking layer positioned between the lower electrode pattern and the upper electrode pattern which passes through the second interlayer insulating layer and the first interlayer insulating layer. (7) Forming a cavity which exposes a side of the etch blocking layer by etching the second interlayer insulating layer and the first interlayer insulating layer. (8) Forming a contact ball in the cavity.

主权项

1. A method for manufacturing a semiconductor device comprising:
forming a lower electrode pattern over a substrate; forming an etch stop film over the lower electrode pattern; forming a first interlayer insulating layer over the etch stop film; forming an upper electrode pattern over the first interlayer insulating layer; forming a second interlayer insulating layer over the upper electrode pattern; forming an etch blocking layer positioned between the lower electrode pattern and the upper electrode pattern, wherein the etch blocking layer passes at least partially through the second interlayer insulating layer and the first interlayer insulating layer; forming a cavity which exposes a side of the etch blocking layer by etching the second interlayer insulating layer and the first interlayer insulating layer; and forming a contact ball in the cavity.