主权项 |
1. An LED epitaxial structure, comprising: a substrate, a buffer layer, and an epitaxial layer, the buffer layer grown on a top surface of the substrate, and the epitaxial layer grown on a top surface of the buffer layer, wherein the epitaxial layer includes a first n-type epitaxial layer, and a second n-type epitaxial layer, the first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer, the first n-type epitaxial layer has a plurality of irregular holes therein, and the first n-type epitaxial layer has a doping concentration which varies along a thickness direction of the first n-type epitaxial layer. |