TANTALUM SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

摘要

This tantalum sputtering target is characterized in that in the sputtering surface thereof, the orientation rate in the (200) plane exceeds 70% and the orientation rate in the (222) plane is no greater than 30%. By means of controlling the crystal orientation of the target, the discharge voltage of the tantalum target is reduced, causing plasma to be easily generated, and there is the effect of increasing the stability of plasma.