| 摘要 |
<p>In manufacturing a CIGS thin film solar cell, the present invention relates to a technique which can manufacture the MoSe2 layer of preferably crystal orientation and desired thickness on a Mo backside electrode and a technique of manufacturing a CIGS thin film solar cell by stacking a light absorption layer, a buffer layer, a transparent layer, and a frontside electrode on the MoSe2 layer.</p> |
