METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device having stable characteristics in a long term.SOLUTION: A gate insulating film 21 is formed on a silicon carbide substrate 10. A gate electrode 30 is formed on the gate insulating film 21. A main electrode 31 is formed on the silicon carbide substrate 10. The silicon carbide substrate 10 is cleaned by using liquid containing water after formation of the gate insulating film 21. The silicon carbide substrate 10 is subjected to heat treatment in an atmosphere containing hydrogen atoms after cleaning the silicon carbide substrate 10.