发明名称 Methods of Forming Patterns
摘要 Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.
申请公布号 US2014179115(A1) 申请公布日期 2014.06.26
申请号 US201414192410 申请日期 2014.02.27
申请人 Micron Technology, Inc. 发明人 Sills Scott E.;Sandhu Gurtej S.;Smythe John;Zhang Ming
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址 Boise ID US
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