SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The semiconductor device includes a capacitor including a plurality of interconnection layers stacked over each other, the plurality of interconnection layers each including a plurality of electrode patterns extended in a first direction, a plurality of via parts provided between the plurality of interconnection layers and electrically interconnecting the plurality of the electrode patterns between the interconnection layers adjacent to each other, and an insulating films formed between the plurality of interconnection layers and the plurality of via parts. Each of the plurality of via parts is laid out, offset from a center of the electrode pattern in a second direction intersecting the first direction, and the plurality of electrode patterns has a larger line width at parts where the via parts are connected to, and a distance between the electrode patterns and the adjacent electrode patterns is reduced at the parts.

主权项

1. A method of manufacturing a semiconductor device comprising:
forming over a semiconductor substrate a first interconnection layer including a first electrode pattern and a second electrode pattern extended in a first direction; forming an insulating film over the semiconductor substrate with the first interconnection layer formed; forming in the insulating film a first via-hole down to the first electrode pattern and a second via-hole down to the second electrode pattern; forming in a surface side of the insulating film a first interconnection trench position above the first electrode pattern, connected to the first via-hole and extended in the first direction, and a second interconnection trench position above the second electrode pattern, connect to the second via-hole and extended in the first direction; and burying in the first via-hole, the second via-hole, the first interconnection trench and the second interconnection trench a conductive film to form a second interconnection layer including a third electrode pattern electrically connected to the first electrode pattern via the first via-hole and a fourth electrode pattern electrically connected to the second electrode pattern via the second via-hole, in forming the first via-hole and the second via-hole, the first via-hole being laid out, offset from a center of the first electrode pattern in a second direction intersecting the first direction, and the second via-hole being laid out, offset from a center of the second electrode pattern in the second direction.