VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY (VCMA) SWITCH AND MAGNETO-ELECTRIC MEMORY (MERAM)

摘要

Voltage controlled magnetic tunnel junctions and memory devices are described which provide efficient high speed switching of non-volatile magnetic devices at high cell densities. Implementations are described which provide a wide range of voltage control alternatives with in-plane and perpendicular magnetization, bidirectionally switched magnetization, and control of domain wall dynamics.

主权项

1. A voltage-controlled magnetic anisotropy (VCMA) switch apparatus, comprising:
at least two ferromagnetic (FM) layers having a FM fixed layer and a FM free layer; a dielectric (DE) layer interposed between said FM fixed layer and said FM free layer; and wherein material, shape and thickness of said FM free layer and said FM fixed layer are selected to have in-plane (IP) and out-of-plane (OOP) anisotropies; wherein material, shape and thickness of said FM free layer is selected to have in-plane (IP) and out-of-plane (OOP) anisotropies which are nearly equal; and wherein OOP anisotropy of said FM free layer is affected by interface properties between said FM layers and said DE layer, and is controlled by voltages applied across said DE layer as an applied voltage, giving rise to a voltage-controlled magnetic anisotropy (VCMA) effect which switches magnetization orientation of said FM free layer in said apparatus.