SEMICONDUCTOR SUBSTRATE FOR PHOTONIC AND ELECTRONIC STRUCTURES AND METHOD OF MANUFACTURE

摘要

A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.

主权项

1. A method of forming an integrated structure, the method comprising:
forming an etch mask material over a semiconductor substrate; using a single reticle in a photolithographic process to pattern the etch mask material to define a first and a second opening for forming a first and a second trench isolation area, the second opening being wider than the first opening; etching first and second trench isolation areas in the semiconductor substrate using the patterned etch mask material; processing the etched first and second trench isolation areas to produce first and second trench isolation areas, filled with a dielectric material, the second dielectric filled trench isolation area being deeper than the dielectric filled first trench isolation area; forming a photonic device over the dielectric filled second trench isolation area such that the photonic device is optically isolated from the substrate.