| 摘要 |
A method for producing an optoelectronic thin-film chip semiconductor device (200) is specified, wherein a conductor structure (2) is applied on a carrier (1) and a multiplicity of optoelectronic semiconductor chips (5) are arranged between the conductor structures, each of said optoelectronic semiconductor chips comprising a layer (7), in particular a luminescence conversion layer, at a top side (6). Furthermore, electrical connections (8) between semiconductor chip (5) and the conductor structure (2) are established, for instance by means of a bonding wire (10), and the semiconductor chips (5) and the conductor structure are surrounded with a moulded body (11), wherein the moulded body (11) does not project beyond the optoelectronic semiconductor chips (5) at the top side (4) thereof facing away from the carrier (1). Moreover, the carrier (1) is removed and the semiconductor chips surrounded by moulding are singulated. In one particular embodiment, a further layer that moulds around the chips, such as a reflection layer, is arranged on the moulded body. |
