发明名称 SUSCEPTOR HAVING INDUCTIVELY COUPLED PLASMA SOURCE AND PLASMA PROCESS CHAMBER
摘要 A susceptor including an inductively coupled plasma source and a plasma processing chamber are provided to improve plasma generation efficiency by focusing the magnetic flux by a magnetic core cover. A substrate to be processed is placed on a susceptor(10). An inductively coupled plasma source(20) for generating the plasma is built in the susceptor. The susceptor includes a base(11), a dielectric cover(15), a bias electrode(12) and an insulating layer(13). The base supports the inductively coupled plasma source. The dielectric cover covers the inductively coupled plasma source. The bias electrode is formed between the base and the inductively coupled plasma source. The insulating layer is formed between the bias electrode and the inductively coupled plasma source.
申请公布号 KR101411994(B1) 申请公布日期 2014.06.26
申请号 KR20070086819 申请日期 2007.08.29
申请人 发明人
分类号 H05H1/24;H05H1/34 主分类号 H05H1/24
代理机构 代理人
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