发明名称 |
PSEUDO-NOR CELL FOR TERNARY CONTENT ADDRESSABLE MEMORY |
摘要 |
A method within a ternary content addressable memory (TCAM) includes receiving a match line output from a previous TCAM stage at a gate of a pull-up transistor of a current TCAM stage and at a gate of a pull-down transistor of the current TCAM stage. The method sets a match line bar at the current TCAM stage to a low value, via the pull-down transistor, when the match line output from the previous TCAM stage indicates a mismatch. The method also sets the match line bar at the current TCAM stage to a high value, via the pull-up transistor, when the match line output from the previous TCAM stage indicates a match. |
申请公布号 |
US2014177310(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201213727494 |
申请日期 |
2012.12.26 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
Vattikonda Rakesh;Desai Nishith;Jung ChangHo |
分类号 |
G11C15/00 |
主分类号 |
G11C15/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method within a ternary content addressable memory (TCAM), the method comprising:
receiving a first match line output from a previous TCAM stage at a gate of a pull-up transistor of a current TCAM stage; receiving the first match line output at a gate of a pull-down transistor of the current TCAM stage; setting a match line bar at the current TCAM stage to a low value, via the pull-down transistor, when the first match line output indicates a mismatch; and setting the match line bar at the current TCAM stage to a high value, via the pull-up transistor, when the first match line output indicates a match. |
地址 |
San Diego CA US |