SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with a composition capable of inhibiting deterioration in electrical characteristics, which becomes prominent with microfabrication.SOLUTION: A semiconductor device comprises a plurality of gate electrode layers separated at a distance from each other. One gate electrode layer included in the plurality of gate electrode layers has portions which overlap respective parts of an oxide semiconductor layer, a source electrode layer and a drain electrode layer; the gate electrode layers included in the plurality of gate electrode layers other than the one gate electrode layer overlap a part of an end of the oxide semiconductor layer; and a length of each of the source electrode layer and the drain electrode layer in a channel width direction is shorter than a length of the one gate electrode layer in a channel width direction.