发明名称 METHOD FOR DESIGNING SEMICONDUCTOR DEVICE, DESIGN DEVICE, AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide a design device of a semiconductor device, a method for designing a semiconductor device, and a program, capable of highly accurately simulating electric characteristics of the semiconductor device.SOLUTION: A method for designing a semiconductor device including a substrate 10 in which a well boundary is formed and a transistor 16 in which a gate 13 is provided on a diffusion region 14 in the substrate according to an embodiment simulates electric characteristics of the semiconductor device using a correction function which corrected a function indicating an impurity concentration distribution varying with the distance between the well boundary and the diffusion region 14 using the width or length of a channel region 15.
申请公布号 JP2014116413(A) 申请公布日期 2014.06.26
申请号 JP20120268449 申请日期 2012.12.07
申请人 RENESAS ELECTRONICS CORP 发明人 NARITA KATAHISA;SAKAMOTO HIRONORI;KO RISHO
分类号 H01L29/78;H01L21/336;H01L29/00 主分类号 H01L29/78
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