发明名称 |
METHOD FOR DESIGNING SEMICONDUCTOR DEVICE, DESIGN DEVICE, AND PROGRAM |
摘要 |
PROBLEM TO BE SOLVED: To provide a design device of a semiconductor device, a method for designing a semiconductor device, and a program, capable of highly accurately simulating electric characteristics of the semiconductor device.SOLUTION: A method for designing a semiconductor device including a substrate 10 in which a well boundary is formed and a transistor 16 in which a gate 13 is provided on a diffusion region 14 in the substrate according to an embodiment simulates electric characteristics of the semiconductor device using a correction function which corrected a function indicating an impurity concentration distribution varying with the distance between the well boundary and the diffusion region 14 using the width or length of a channel region 15. |
申请公布号 |
JP2014116413(A) |
申请公布日期 |
2014.06.26 |
申请号 |
JP20120268449 |
申请日期 |
2012.12.07 |
申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
NARITA KATAHISA;SAKAMOTO HIRONORI;KO RISHO |
分类号 |
H01L29/78;H01L21/336;H01L29/00 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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