发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by wet etching in which an etchant is used, and a second etching step is performed by dry etching in which an etching gas is used. |
申请公布号 |
US2014179058(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201414191853 |
申请日期 |
2014.02.27 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
SUZAWA Hideomi;SASAGAWA Shinya;MURAOKA Taiga;ITO Shunichi;HOSOBA Miyuki |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |