发明名称 |
METHOD OF SEPARATING SUBSTRATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
A method of fabricating a semiconductor device, the method including: forming a first mask pattern including a masking region and an open region on a substrate; forming a sacrificial layer to cover the substrate and the first mask pattern; patterning the sacrificial layer to form a seed layer and to expose the first mask pattern; forming a second mask pattern on the exposed first mask pattern; forming an epitaxial layer on the seed layer and the second mask pattern, and forming a void between the second mask pattern and the epitaxial layer; and separating the substrate from the epitaxial layer. |
申请公布号 |
US2014179043(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201314138923 |
申请日期 |
2013.12.23 |
申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
Jang Jong Min;Kim Hwa Mok;Lee Kyu Ho;Kim Chang Hoon;Suh Daewoong;In Chi Hyun;Park Dae Seok;Chae Jong Hyeon |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of separating a substrate, comprising:
forming a first mask pattern comprising a masking region and an open region, on a substrate; forming a sacrificial layer covering the substrate and the first mask pattern; patterning the sacrificial layer to form a seed layer and to expose at least a portion of the first mask pattern; forming a second mask pattern on the exposed portion of the first mask pattern; forming an epitaxial layer on the seed layer and the second mask pattern, and forming a void between the second mask pattern and the epitaxial layer; and separating the substrate and the epitaxial layer. |
地址 |
Ansan-si KR |