PLASMA DOPING APPARATUS AND PLASMA DOPING METHOD

摘要

Disclosed is a plasma doping apparatus provided with a plasma generating mechanism. The plasma generating mechanism includes a microwave generator that generates microwave for plasma excitation, a dielectric window that transmits the microwave generated by the microwave generator into a processing container, and a radial line slot antenna formed with a plurality of slots. The radial line slot antenna radiates the microwave to the dielectric window. A control unit controls the plasma doping apparatus such that a doping gas and a gas for plasma excitation are supplied into the processing container by a gas supply unit in a state where the substrate is placed on a holding unit, and then plasma is generated by the plasma generating mechanism to perform doping on the substrate such that the concentration of the dopant implanted into the substrate is less than 1×1013 atoms/cm2.

主权项

1. A plasma doping apparatus that performs doping by implanting a dopant into a substrate to be processed, the plasma doping apparatus comprising:
a processing container configured to implant the dopant into the substrate therein; a gas supply unit configured to supply a doping gas and an inert gas for plasma excitation into the processing container; a holding unit disposed within the processing container and configured to hold the substrate thereon; a plasma generating mechanism configured to generate plasma within the processing container by using microwave; a pressure control mechanism configured to control pressure within the processing container; and a control unit configured to control the plasma doping apparatus, wherein the plasma generating mechanism includes a microwave generator configured to generate microwave for plasma excitation, a dielectric window configured to transmit the microwave generated by the microwave generator into the processing container, and a radial line slot antenna formed with a plurality of slots and configured to radiate the microwave to the dielectric window, and the control unit performs a control such that the doping gas and the gas for plasma excitation are supplied into the processing container by the gas supply unit in a state where the substrate is placed on the holding unit, and then the plasma is generated by the plasma generating mechanism to perform the doping on the substrate such that the concentration of the dopant implanted into the substrate is less than 1×1013 atoms/cm2.