发明名称 QUANTIFYING SILICON DEGRADATION IN AN INTEGRATED CIRCUIT
摘要 A first instance and a second instance of an oscillating circuit are each formed as part of an integrated circuit and are used to monitor degradation over time of one or more portions of the integrated circuit. The first instance of the oscillating circuit is configured to be coupled to a power source during normal operation of the integrated circuit and the second instance is configured to be decoupled from the power source. Over the lifetime of the integrated circuit, the first instance undergoes degradation from use while the second instance of the oscillating circuit remains unpowered, therefore experiencing essentially no use-related degradation. During a testing operation, the second instance can be used as a reference circuit that accurately quantifies use-related degradation of the first instance of the oscillating circuit and, by extension, one or more portions of the integrated circuit.
申请公布号 US2014176116(A1) 申请公布日期 2014.06.26
申请号 US201213723139 申请日期 2012.12.20
申请人 NVIDIA CORPORATION 发明人 KUMAR Hemant;LONGNECKER Matthew Raymond;SMITH Brian
分类号 G01R23/02;H01L25/00 主分类号 G01R23/02
代理机构 代理人
主权项 1. A method for determining the degradation of an integrated circuit, the method comprising: measuring a first output frequency of a first instance of an oscillating circuit that is formed on a semiconductor substrate and is configured to be coupled to a power source during operation of the integrated circuit; measuring a second output frequency of a second instance of the oscillating circuit that is formed on the semiconductor substrate, is decoupled from the power source during operation of the integrated circuit, and is configured to be coupled to the power source during a testing operation.
地址 Santa Clara CA US