| 发明名称 |
Reduced Scale Resonant Tunneling Field Effect Transistor |
| 摘要 |
An embodiment includes a heterojunction tunneling field effect transistor including a source, a channel, and a drain; wherein (a) the channel includes a major axis, corresponding to channel length, and a minor axis that corresponds to channel width and is orthogonal to the major axis; (b) the channel length is less than 10 nm long; (c) the source is doped with a first polarity and has a first conduction band; (d) the drain is doped with a second polarity, which is opposite the first polarity, and the drain has a second conduction band with higher energy than the first conduction band. Other embodiments are described herein. |
| 申请公布号 |
US2014175376(A1) |
申请公布日期 |
2014.06.26 |
| 申请号 |
US201213723634 |
申请日期 |
2012.12.21 |
| 申请人 |
Avci Uygar E.;Nikonov Dmitri;Young Ian |
发明人 |
Avci Uygar E.;Nikonov Dmitri;Young Ian |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus comprising:
a heterojunction tunneling field effect transistor including a source, a channel, and a drain; wherein (a) the channel includes a major axis, corresponding to channel length, and a minor axis that corresponds to channel width and is orthogonal to the major axis; (b) the channel length is less than 10 nm long; (c) the source is doped with a first polarity and has a first conduction band; (d) the drain is doped with a second polarity, which is opposite the first polarity, and the drain has a second conduction band with higher energy than the first conduction band. |
| 地址 |
Portland OR US |
