发明名称 |
NONVOLATILE MEMORY APPARATUS |
摘要 |
A nonvolatile memory apparatus includes a read/write control unit and a voltage generation unit and the memory cell. The read/write control circuit is configured to supply a bias voltage in response to a read control signal, a write control signal and data. The voltage generation unit is configured to compare a level of the bias voltage with a voltage level of a sensing node and drive the sensing node at voltage having a constant level based on a result of the comparison. The memory cell coupled with the sensing node and configured to receive the voltage having the constant level. |
申请公布号 |
US2014177353(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201313846673 |
申请日期 |
2013.03.18 |
申请人 |
SK HYNIX INC. |
发明人 |
PARK Chul Hyun |
分类号 |
G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
1. A nonvolatile memory apparatus, comprising:
a read/write control unit configured to supply a bias voltage in response to a control signal; a voltage generation unit configured to compare a level of the bias voltage with a voltage level of a sensing node and drive the sensing node at voltage having a constant level based on a result of the comparison; and a memory cell coupled with the sensing node and configured to receive the voltage having the constant level. |
地址 |
Icheon-si Gyeonggi-do KR |