发明名称 NONVOLATILE MEMORY APPARATUS
摘要 A nonvolatile memory apparatus includes a read/write control unit and a voltage generation unit and the memory cell. The read/write control circuit is configured to supply a bias voltage in response to a read control signal, a write control signal and data. The voltage generation unit is configured to compare a level of the bias voltage with a voltage level of a sensing node and drive the sensing node at voltage having a constant level based on a result of the comparison. The memory cell coupled with the sensing node and configured to receive the voltage having the constant level.
申请公布号 US2014177353(A1) 申请公布日期 2014.06.26
申请号 US201313846673 申请日期 2013.03.18
申请人 SK HYNIX INC. 发明人 PARK Chul Hyun
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
主权项 1. A nonvolatile memory apparatus, comprising: a read/write control unit configured to supply a bias voltage in response to a control signal; a voltage generation unit configured to compare a level of the bias voltage with a voltage level of a sensing node and drive the sensing node at voltage having a constant level based on a result of the comparison; and a memory cell coupled with the sensing node and configured to receive the voltage having the constant level.
地址 Icheon-si Gyeonggi-do KR