发明名称 |
NON-VOLATILE REGISTER AND NON-VOLATILE SHIFT REGISTER |
摘要 |
Non-Volatile Register (NVR) and Non-Volatile Shift Register (NVSR) devices are disclosed. The innovative NVR and NVSR devices of the invention can rapidly load the stored non-volatile data in non-volatile memory elements into their correspondent static memory elements for fast and constant referencing in digital circuitry. According to the invention, the loading process from non-volatile memory to static memory is a direct process without going through the conventional procedures of accessing the non-volatile memory, sensing from the non-volatile memory, and loading into the digital registers and shift registers. |
申请公布号 |
US2014177348(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201213724623 |
申请日期 |
2012.12.21 |
申请人 |
FLASHSILICON INCORPORATION |
发明人 |
WANG Lee |
分类号 |
G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
1. An non-volatile register cell, comprising:
a static memory element having a first output node and a second output node; a non-volatile memory (NVM) element having a charge storing material, a control gate electrode, a first source/drain electrode and a second source/drain electrode, the first source/drain electrode being coupled to the first output node; and a reset transistor coupled to the second output node. |
地址 |
Diamond Bar CA US |