发明名称 NON-VOLATILE REGISTER AND NON-VOLATILE SHIFT REGISTER
摘要 Non-Volatile Register (NVR) and Non-Volatile Shift Register (NVSR) devices are disclosed. The innovative NVR and NVSR devices of the invention can rapidly load the stored non-volatile data in non-volatile memory elements into their correspondent static memory elements for fast and constant referencing in digital circuitry. According to the invention, the loading process from non-volatile memory to static memory is a direct process without going through the conventional procedures of accessing the non-volatile memory, sensing from the non-volatile memory, and loading into the digital registers and shift registers.
申请公布号 US2014177348(A1) 申请公布日期 2014.06.26
申请号 US201213724623 申请日期 2012.12.21
申请人 FLASHSILICON INCORPORATION 发明人 WANG Lee
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
主权项 1. An non-volatile register cell, comprising: a static memory element having a first output node and a second output node; a non-volatile memory (NVM) element having a charge storing material, a control gate electrode, a first source/drain electrode and a second source/drain electrode, the first source/drain electrode being coupled to the first output node; and a reset transistor coupled to the second output node.
地址 Diamond Bar CA US