发明名称 METAL-NITRIDE THERMISTOR MATERIAL, MANUFACTURING METHOD THEREFOR, AND FILM-TYPE THERMISTOR SENSOR
摘要 Provided is a metal-nitride thermistor material that has a high heat tolerance, is highly reliable, and can be used to form a film or the like directly, without firing. Also provided are a method for manufacturing said metal-nitride thermistor material and a film-type thermistor sensor. This metal-nitride material for use in a thermistor comprises a metal nitride that can be represented by the general formula (Ti1&minus;wCrw)xAlyNz (with 0.0 < w < 1.0, 0.70 &le; y/(x+y) &le; 0.95, 0.4 &le; z &le; 0.5, and x+y+z = 1), and said metal-nitride material has a single-phase wurtzite hexagonal crystal structure.
申请公布号 WO2014097883(A1) 申请公布日期 2014.06.26
申请号 WO2013JP82518 申请日期 2013.11.27
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 FUJITA, TOSHIAKI;TANAKA, HIROSHI;NAGATOMO, NORIAKI
分类号 C23C14/06;H01C7/04 主分类号 C23C14/06
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