发明名称 |
METAL-NITRIDE THERMISTOR MATERIAL, MANUFACTURING METHOD THEREFOR, AND FILM-TYPE THERMISTOR SENSOR |
摘要 |
Provided is a metal-nitride thermistor material that has a high heat tolerance, is highly reliable, and can be used to form a film or the like directly, without firing. Also provided are a method for manufacturing said metal-nitride thermistor material and a film-type thermistor sensor. This metal-nitride material for use in a thermistor comprises a metal nitride that can be represented by the general formula (Ti1−wCrw)xAlyNz (with 0.0 < w < 1.0, 0.70 ≤ y/(x+y) ≤ 0.95, 0.4 ≤ z ≤ 0.5, and x+y+z = 1), and said metal-nitride material has a single-phase wurtzite hexagonal crystal structure. |
申请公布号 |
WO2014097883(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
WO2013JP82518 |
申请日期 |
2013.11.27 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
FUJITA, TOSHIAKI;TANAKA, HIROSHI;NAGATOMO, NORIAKI |
分类号 |
C23C14/06;H01C7/04 |
主分类号 |
C23C14/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|