MANUFACTURING METHOD AND CLEANING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To make it easy to treat a cleaning gas and a nitrogen monoxide gas and improve performance of cleaning with high controllability when dry cleaning in a processing chamber is performed by addition of the nitrogen monoxide gas to the cleaning gas.SOLUTION: A substrate processing apparatus comprises: a processing container for processing a substrate; a first cleaning gas supply system for preliminarily mixing a fluorine atom-containing gas and a nitrogen monoxide gas and supplying the mixed gas to the inside of the processing container; and a second cleaning gas system arranged separately from the first cleaning gas supply system, for supplying a fluorine atom-containing gas to the inside of the processing container.