Multi-Level Memory Array Having Resistive Elements For Multi-Bit Data Storage

摘要

A resistor array for multi-bit data storage without the need to increase the size of a memory chip or scale down the feature size of a memory cell contained within the memory chip is provided. The resistor array incorporates a number of discrete resistive elements to be selectively connected, in different series combinations, to at least one memory cell or memory device. In one configuration, by connecting each memory cell or device with at least one resistor array, a resistive switching layer found in the resistive switching memory element of the connected memory device is capable of being at multiple resistance states for storing multiple bits of digital information. During device programming operations, when a desired series combination of the resistive elements within the resistor array is selected, the resistive switching layer in the connected memory device can be in a desired resistance state.

主权项

1. A memory device comprising:
one or more resistive switching memory elements, each configured to store N bits of data, wherein N is a natural number of more than one; and a resistor array electrically connected to the one or more resistive switching memory elements, wherein a current passing through each resistive switching memory element is controlled and determined by the total resistance of the resistor array, wherein the resistor array comprises two or more resistive elements, each resistive element is selectively configured to be connected an “on” resistance state with its own resistance value, and wherein the total resistance of the resistor array is determined by the resistance values of all the resistive elements that are at the “on” resistance state within the resistor array.