Method for Bonding of Group III-Nitride Device-on-Silicon and Devices Obtained Thereof

摘要

A method for flip chip bonding a GaN device formed on a silicon substrate is described. The method includes providing a silicon substrate having a GaN device thereon, the GaN device comprising at least one gallium-nitride layer near the silicon substrate and remote from the silicon substrate a dielectric layer comprising at least one via configured to electrically contact the at least one gallium-nitride layer, forming a stiffener layer over the GaN device leaving the at least one via exposed, flip chip bonding the GaN device to a submount, wherein the stiffener layer physically contacts the submount and the submount is electrically connected to the at least gallium-nitride layer through the via, and completely removing the silicon substrate exposing the GaN device. Preferably, the material of the stiffener layer comprises silicon, such as silicon, silicon-germanium, or silicon-carbide.

主权项

1. A method for bonding a group III-nitride based device formed on a silicon substrate, the method comprising:
providing a silicon substrate having at least one group III-nitride based device thereon, the group III-nitride based device comprising at least one group III-nitride layer near the silicon substrate, and remote from the silicon substrate a dielectric layer comprising at least one via configured to electrically contact the at least one group III-nitride layer; forming a stiffener layer over the at least one group III-nitride based device leaving the at least one via exposed; flipping over and bonding the at least one group III-nitride based device to a submount, wherein the stiffener layer physically contacts the submount and the submount is electrically connected to the at least group III-nitride layer through the via; and removing the silicon substrate to expose the at least one group III-nitride based device.