| 摘要 |
Disclosed is a small-sized rapidly-flip-flop Schmitt flip-flop circuit used for a silicon-on-insulator process, which changes the threshold voltage of a MOS transistor by adopting a PMOS/NMOS control circuit, so as to enable the input transition from a high level to a low level and the input transition from a low level to a high level to have different flip-flop threshold voltages, thereby achieving a Schmitt flip-flop function. By adopting the PMOS/NMOS control circuit, time for rising and falling is shortened, and the number of transistors on a pull-up path and a pull-down path is reduced at the same time, so that the circuit is faster in flip-flop speed and smaller in size as compared with a traditional structure. |
