| 摘要 |
<p>Provided is a semiconductor device in which IGBT areas and diode areas are formed in the same semiconductor substrate. The IGBT area includes a collector layer, an IGBT drift layer, body layers, gate electrodes, and emitter layers. The diode area includes a cathode layer, a diode drift layer, anode layers, trench electrodes, and anode contact layers. The diode area is divided into unit diode areas by the gate electrodes or the trench electrodes. In the unit diode area adjacent to the IGBT area, when the surface of the semiconductor substrate is viewed in a plan view, the anode layers and the anode contact layers are arranged in a mixed manner. At least at a position corresponding to each emitter layer with the gate electrode being interposed therebetween, the anode contact layer is arranged.</p> |
