COMPOSITION FOR ETCHING METAL LAYER AND METHOD FOR ETCHING USING THE SAME

摘要

Disclosed are a composition for an etching solution capable of simultaneously etching a double layer including a copper layer and an indium tin oxide layer, or a double layer including a copper layer and a metal layer; and an etching method thereof. The composition for an etching solution is composed of 5-20 wt% of hydrogen peroxide, 0.1-5 wt% of sulfonic acid compound, 0.1-2 wt% of carbonyl-based organic acid compound, 0.1-0.4 wt% of fluorine compound, 0.01-3 wt% of azole-based compound, and the remainder consisting of water.