发明名称 UPPER ELECTRODE OF DRY ETCHING CHAMBER AND METHOD FOR MANUFACTURING THE SAME
摘要 Disclosed are an upper electrode of a dry etching chamber and a method for manufacturing the same. The upper electrode includes a planar body and at least one gas-in unit. The planar body includes at least one through-hole. The gas-in unit is mounted inside the through-hole and includes multiple gas-in holes. The upper electrode of a dry etching chamber and the method for manufacturing the same form the gas holes inside the gas-hole unit, thereby preventing the planar body from being damaged and increasing a service life of the upper electrode.
申请公布号 KR20140079319(A) 申请公布日期 2014.06.26
申请号 KR20130157468 申请日期 2013.12.17
申请人 GLOBAL MATERIAL SCIENCE CO., LTD. 发明人 KIM, DONG HEE;LIU FANG YU;CHEN CHING FENG
分类号 H01L21/3065 主分类号 H01L21/3065
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