发明名称 |
UPPER ELECTRODE OF DRY ETCHING CHAMBER AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Disclosed are an upper electrode of a dry etching chamber and a method for manufacturing the same. The upper electrode includes a planar body and at least one gas-in unit. The planar body includes at least one through-hole. The gas-in unit is mounted inside the through-hole and includes multiple gas-in holes. The upper electrode of a dry etching chamber and the method for manufacturing the same form the gas holes inside the gas-hole unit, thereby preventing the planar body from being damaged and increasing a service life of the upper electrode. |
申请公布号 |
KR20140079319(A) |
申请公布日期 |
2014.06.26 |
申请号 |
KR20130157468 |
申请日期 |
2013.12.17 |
申请人 |
GLOBAL MATERIAL SCIENCE CO., LTD. |
发明人 |
KIM, DONG HEE;LIU FANG YU;CHEN CHING FENG |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|